A Power MOSFET with P-base Schottky Diode and Built-in Channel Diode for Fast Reverse Recovery
نویسندگان
چکیده
A power MOSFET with P-base Schottky diode and built-in channel is proposed numerically investigated in this article. The formed by the contact reverse series P-base/N-drift junction diode. Besides, coupling gate of dummy to source, a introduced, which provides unipolar conduction current path drastically reduces gate-to-drain charge. When serves as freewheeling diode, reverse-biased inactivates so that will be carried out As result, comparison planar MOSFET, recovery charge could reduced 96.9 % 75.4%, respectively.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3060152